New
1 year warranty
1,500,000 hours MTBF
Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
Supports PCIe3.0x4 and NVMe 1.3 protocol.
Supports LDPC ECC to enhance data reliability.
View information through S.M.A.R.T.
Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
Supports TRIM to improve read/write performance and speed.
Low power consumption management.
KSh 2,300.00
New
Model: DHI‑SSD‑C900VND1TB
Capacity: 1 TB
Form Factor: M.2 2242 (approx. 22 × 42 mm)
Interface: PCIe Gen 3.0 ×4
Protocol: NVMe 1.3
NAND Flash: 3D NAND
Sequential Read Speed: Up to 3,400 MB/s
Sequential Write Speed: Up to 3,000 MB/s
MTBF (Mean Time Between Failures): ~1,500,000 hours
TBW (Total Bytes Written): ~1,000 GB? (Exact TBW unspecified)
Features: LDPC ECC, SMART, TRIM, Garbage Collection, End-to-End Data Protection
Operating Temperature: 0 °C to +70 °C
Storage Temperature: –40 °C to +85 °C
Warranty: Typically 1-year limited warranty (region-dependent)
KSh 12,500.00
New
Adopts high-quality 3D NAND wafer level chip
Supports PCIe3.0 x4, and NVMe 1.3 protocol
All-metal cooling plate is included; equipped with intelligent temperature control technology
Supports TRIM to improve read/write performance and speed
Supports Max. Write technology for full-disk SLC cache
Supports LDPC ECC
Low power consumption management
KSh 10,000.00
New
Adopts high-quality wafer level chip
Supports SATA III protocol with transmission speed up to 550 MB/s
View information through S.M.A.R.T
Provides better read and write performance with TRIM and NCQ
Low power consumption management
KSh 2,400.00
New
Adopts high-quality wafer level chip
Supports SATA III protocol with transmission speed up to 550 MB/s
View information through S.M.A.R.T
Provides better read and write performance with TRIM and NCQ
Low power consumption management
KSh 9,000.00
New
Adopts high-quality wafer level chip
Supports SATA III protocol with transmission speed up to 550 MB/s
View information through S.M.A.R.T
Provides better read and write performance with TRIM and NCQ
Low power consumption management
KSh 3,200.00
New
Adopts high-quality wafer level chip
Supports SATA III protocol with transmission speed up to 550 MB/s
View information through S.M.A.R.T
Provides better read and write performance with TRIM and NCQ
Low power consumption management
KSh 15,500.00
New
Adopts high-quality wafer level chip
Supports SATAⅢ protocol with transmission speed up to 550 MB/s
View information through S.M.A.R.T
Provides better read and write performance with TRIM and NCQ
Low power consumption management
Large TBW
KSh 5,000.00
New
1 year warranty
1,500,000 hours MTBF
Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
Supports PCIe3.0x4 and NVMe 1.3 protocol.
Supports LDPC ECC to enhance data reliability.
View information through S.M.A.R.T.
Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
Supports TRIM to improve read/write performance and speed.
Low power consumption management.
KSh 3,100.00
New
PCIe Gen3.0 × 4.
Compatible with NVMe 1.3 protocol; high performance and low latency
View information through S.M.A.R.T.
Provides better read and write performance with TRIM.
Adopts LDPC ECC algorithm to enhance data reliability.
Low power consumption management.
KSh 15,000.00
New
Model: DHI‑SSD‑C900VND512G
Capacity: 512 GB
Form Factor: M.2 2242 (≈22 × 42 mm)
Interface: PCIe Gen 3.0×4 (NVMe 1.3/1.4)
NAND Flash: 3D NAND with LDPC ECC
Sequential Read Speed: Up to 3,400 MB/s
Sequential Write Speed: Up to 3,000 MB/s
4K Random Read IOPS: Estimated up to ~400,000
4K Random Write IOPS: Estimated up to ~500,000
Power Consumption: Active and idle optimized for compact devices
Features: S.M.A.R.T., TRIM, Garbage Collection, LDPC ECC
Shock Resistance & Vibration: Designed to meet industrial standards
Operating Temperature: 0 °C to +70 °C
Storage Temperature: –40 °C to +85 °C
Warranty: Typically 1-year limited (region-dependent)
KSh 7,500.00
New
1 year warranty
1,500,000 hours MTBF
Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
Supports PCIe3.0x4 and NVMe 1.3 protocol.
Supports LDPC ECC to enhance data reliability.
View information through S.M.A.R.T.
Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
Supports TRIM to improve read/write performance and speed.
Low power consumption management.
KSh 5,500.00
New
Capacity: 256 GB
Form Factor: M.2 2280
Port: PCIe Gen 3.0 x 4
Net Weight: Max. 8 g (0.02 lb)
Product Dimensions: 80.00 mm × 23.00 mm × 4.80 mm (3.15" × 0.91" × 0.19")
Packaging Dimensions: 130 mm × 104 mm × 17 mm (5.12" × 4.09" × 0.67")
Memory Component: 3D NAND Flash
Power Consumption: Max: 2.8 W; Idle: 0.17 W
S.M.A.R.T Support: Yes
TRIM Support: Yes
Garbage Collection: Yes
Sequential Read Speed: Up to 3,300 MB/s
Sequential Write Speed: Up to 1,200 MB/s
4K Random Read: Up to 124,400 IOPS
4K Random Write: Up to 177,900 IOPS
MTBF (Mean Time Between Failures): 1,500,000 hours
Operating Temperature: 0 °C to +70 °C (+32 °F to +158 °F)
Storage Temperature: -40 °C to +85 °C (-40 °F to +185 °F)
Operating Humidity: 5%–95% (non-condensing)
Vibration Resistance: 10–200 Hz, 0.5G
Shock Resistance: 1,500 G/0.5 ms (half sine wave)
Total Bytes Written (TBW): 128 TB
Warranty: 1-year limited warranty
KSh 5,000.00
New
Capacity: 512 GB
Form Factor: M.2 2280
Port: PCIe Gen 3.0 x 4
Net Weight: Max. 8 g (0.02 lb)
Product Dimensions: 80.00 mm × 23.00 mm × 4.80 mm (3.15" × 0.91" × 0.19")
Packaging Dimensions: 130 mm × 104 mm × 17 mm (5.12" × 4.09" × 0.67")
Memory Component: 3D NAND Flash
Power Consumption: Max: 2.8 W; Idle: 0.17 W
S.M.A.R.T Support: Yes
TRIM Support: Yes
Garbage Collection: Yes
Sequential Read Speed: Up to 3,300 MB/s
Sequential Write Speed: Up to 1,200 MB/s
4K Random Read: Up to 124,400 IOPS
4K Random Write: Up to 177,900 IOPS
MTBF (Mean Time Between Failures): 1,500,000 hours
Operating Temperature: 0 °C to +70 °C (+32 °F to +158 °F)
Storage Temperature: -40 °C to +85 °C (-40 °F to +185 °F)
Operating Humidity: 5%–95% (non-condensing)
Vibration Resistance: 10–200 Hz, 0.5G
Shock Resistance: 1,500 G/0.5 ms (half sine wave)
Total Bytes Written (TBW): 128 TB
Warranty: 1-year limited warranty
KSh 8,000.00
New
Adopts high-quality wafer level chip
Supports SATA III protocol with transmission speed up to 550 MB/s
View information through S.M.A.R.T
Provides better read and write performance with TRIM and NCQ
Low power consumption management
KSh 8,000.00
New
Adopts high-quality wafer level chip
Supports SATA III protocol with transmission speed up to 550 MB/s
View information through S.M.A.R.T
Provides better read and write performance with TRIM and NCQ
Low power consumption management
KSh 3,500.00
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