-
New
- 1 year warranty
- 1,500,000 hours MTBF
- Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
- Supports PCIe3.0x4 and NVMe 1.3 protocol.
- Supports LDPC ECC to enhance data reliability.
- View information through S.M.A.R.T.
- Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
- Supports TRIM to improve read/write performance and speed.
- Low power consumption management.
KSh2,300.00
-
New
- Model: DHI‑SSD‑C900VND1TB
- Capacity: 1 TB
- Form Factor: M.2 2242 (approx. 22 × 42 mm)
- Interface: PCIe Gen 3.0 ×4
- Protocol: NVMe 1.3
- NAND Flash: 3D NAND
- Sequential Read Speed: Up to 3,400 MB/s
- Sequential Write Speed: Up to 3,000 MB/s
- MTBF (Mean Time Between Failures): ~1,500,000 hours
- TBW (Total Bytes Written): ~1,000 GB? (Exact TBW unspecified)
- Features: LDPC ECC, SMART, TRIM, Garbage Collection, End-to-End Data Protection
- Operating Temperature: 0 °C to +70 °C
- Storage Temperature: –40 °C to +85 °C
- Warranty: Typically 1-year limited warranty (region-dependent)
KSh12,500.00
-
New
- Adopts high-quality 3D NAND wafer level chip
- Supports PCIe3.0 x4, and NVMe 1.3 protocol
- All-metal cooling plate is included; equipped with intelligent temperature control technology
- Supports TRIM to improve read/write performance and speed
- Supports Max. Write technology for full-disk SLC cache
- Supports LDPC ECC
- Low power consumption management
KSh10,000.00
-
New
- Adopts high-quality wafer level chip
- Supports SATA III protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
KSh2,400.00
-
New
- Adopts high-quality wafer level chip
- Supports SATA III protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
KSh9,000.00
-
New
- Adopts high-quality wafer level chip
- Supports SATA III protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
KSh3,200.00
-
New
- Adopts high-quality wafer level chip
- Supports SATA III protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
KSh15,500.00
-
New
- Adopts high-quality wafer level chip
- Supports SATAⅢ protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
- Large TBW
KSh5,000.00
-
New
- 1 year warranty
- 1,500,000 hours MTBF
- Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
- Supports PCIe3.0x4 and NVMe 1.3 protocol.
- Supports LDPC ECC to enhance data reliability.
- View information through S.M.A.R.T.
- Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
- Supports TRIM to improve read/write performance and speed.
- Low power consumption management.
KSh3,100.00
-
New
- PCIe Gen3.0 × 4.
- Compatible with NVMe 1.3 protocol; high performance and low latency
- View information through S.M.A.R.T.
- Provides better read and write performance with TRIM.
- Adopts LDPC ECC algorithm to enhance data reliability.
- Low power consumption management.
KSh15,000.00
-
New
- Model: DHI‑SSD‑C900VND512G
- Capacity: 512 GB
- Form Factor: M.2 2242 (≈22 × 42 mm)
- Interface: PCIe Gen 3.0×4 (NVMe 1.3/1.4)
- NAND Flash: 3D NAND with LDPC ECC
- Sequential Read Speed: Up to 3,400 MB/s
- Sequential Write Speed: Up to 3,000 MB/s
- 4K Random Read IOPS: Estimated up to ~400,000
- 4K Random Write IOPS: Estimated up to ~500,000
- Power Consumption: Active and idle optimized for compact devices
- Features: S.M.A.R.T., TRIM, Garbage Collection, LDPC ECC
- Shock Resistance & Vibration: Designed to meet industrial standards
- Operating Temperature: 0 °C to +70 °C
- Storage Temperature: –40 °C to +85 °C
- Warranty: Typically 1-year limited (region-dependent)
KSh7,500.00
-
New
- 1 year warranty
- 1,500,000 hours MTBF
- Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
- Supports PCIe3.0x4 and NVMe 1.3 protocol.
- Supports LDPC ECC to enhance data reliability.
- View information through S.M.A.R.T.
- Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
- Supports TRIM to improve read/write performance and speed.
- Low power consumption management.
KSh5,500.00
-
New
- Capacity: 256 GB
- Form Factor: M.2 2280
- Port: PCIe Gen 3.0 x 4
- Net Weight: Max. 8 g (0.02 lb)
- Product Dimensions: 80.00 mm × 23.00 mm × 4.80 mm (3.15" × 0.91" × 0.19")
- Packaging Dimensions: 130 mm × 104 mm × 17 mm (5.12" × 4.09" × 0.67")
- Memory Component: 3D NAND Flash
- Power Consumption: Max: 2.8 W; Idle: 0.17 W
- S.M.A.R.T Support: Yes
- TRIM Support: Yes
- Garbage Collection: Yes
- Sequential Read Speed: Up to 3,300 MB/s
- Sequential Write Speed: Up to 1,200 MB/s
- 4K Random Read: Up to 124,400 IOPS
- 4K Random Write: Up to 177,900 IOPS
- MTBF (Mean Time Between Failures): 1,500,000 hours
- Operating Temperature: 0 °C to +70 °C (+32 °F to +158 °F)
- Storage Temperature: -40 °C to +85 °C (-40 °F to +185 °F)
- Operating Humidity: 5%–95% (non-condensing)
- Vibration Resistance: 10–200 Hz, 0.5G
- Shock Resistance: 1,500 G/0.5 ms (half sine wave)
- Total Bytes Written (TBW): 128 TB
- Warranty: 1-year limited warranty
KSh5,000.00
-
New
- Capacity: 512 GB
- Form Factor: M.2 2280
- Port: PCIe Gen 3.0 x 4
- Net Weight: Max. 8 g (0.02 lb)
- Product Dimensions: 80.00 mm × 23.00 mm × 4.80 mm (3.15" × 0.91" × 0.19")
- Packaging Dimensions: 130 mm × 104 mm × 17 mm (5.12" × 4.09" × 0.67")
- Memory Component: 3D NAND Flash
- Power Consumption: Max: 2.8 W; Idle: 0.17 W
- S.M.A.R.T Support: Yes
- TRIM Support: Yes
- Garbage Collection: Yes
- Sequential Read Speed: Up to 3,300 MB/s
- Sequential Write Speed: Up to 1,200 MB/s
- 4K Random Read: Up to 124,400 IOPS
- 4K Random Write: Up to 177,900 IOPS
- MTBF (Mean Time Between Failures): 1,500,000 hours
- Operating Temperature: 0 °C to +70 °C (+32 °F to +158 °F)
- Storage Temperature: -40 °C to +85 °C (-40 °F to +185 °F)
- Operating Humidity: 5%–95% (non-condensing)
- Vibration Resistance: 10–200 Hz, 0.5G
- Shock Resistance: 1,500 G/0.5 ms (half sine wave)
- Total Bytes Written (TBW): 128 TB
- Warranty: 1-year limited warranty
KSh8,000.00
-
New
- Adopts high-quality wafer level chip
- Supports SATA III protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
KSh8,000.00
-
New
- Adopts high-quality wafer level chip
- Supports SATA III protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
KSh3,500.00
No products in the cart.