- 1 year warranty
 - 1,500,000 hours MTBF
 - Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
 - Supports PCIe3.0x4 and NVMe 1.3 protocol.
 - Supports LDPC ECC to enhance data reliability.
 - View information through S.M.A.R.T.
 - Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
 - Supports TRIM to improve read/write performance and speed.
 - Low power consumption management.
 
 
KSh2,300.00 			
- Model: DHI‑SSD‑C900VND1TB
 - Capacity: 1 TB
 - Form Factor: M.2 2242 (approx. 22 × 42 mm)
 - Interface: PCIe Gen 3.0 ×4
 - Protocol: NVMe 1.3
 - NAND Flash: 3D NAND
 - Sequential Read Speed: Up to 3,400 MB/s
 - Sequential Write Speed: Up to 3,000 MB/s
 - MTBF (Mean Time Between Failures): ~1,500,000 hours
 - TBW (Total Bytes Written): ~1,000 GB? (Exact TBW unspecified)
 - Features: LDPC ECC, SMART, TRIM, Garbage Collection, End-to-End Data Protection
 - Operating Temperature: 0 °C to +70 °C
 - Storage Temperature: –40 °C to +85 °C
 - Warranty: Typically 1-year limited warranty (region-dependent)
 
 
KSh12,500.00 			
- Adopts high-quality 3D NAND wafer level chip
 - Supports PCIe3.0 x4, and NVMe 1.3 protocol
 - All-metal cooling plate is included; equipped with intelligent temperature control technology
 - Supports TRIM to improve read/write performance and speed
 - Supports Max. Write technology for full-disk SLC cache
 - Supports LDPC ECC
 - Low power consumption management
 
 
KSh10,000.00 			
- Adopts high-quality wafer level chip
 - Supports SATA III protocol with transmission speed up to 550 MB/s
 - View information through S.M.A.R.T
 - Provides better read and write performance with TRIM and NCQ
 - Low power consumption management
 
 
KSh2,400.00 			
- Adopts high-quality wafer level chip
 - Supports SATA III protocol with transmission speed up to 550 MB/s
 - View information through S.M.A.R.T
 - Provides better read and write performance with TRIM and NCQ
 - Low power consumption management
 
 
KSh9,000.00 			
- Adopts high-quality wafer level chip
 - Supports SATA III protocol with transmission speed up to 550 MB/s
 - View information through S.M.A.R.T
 - Provides better read and write performance with TRIM and NCQ
 - Low power consumption management
 
 
KSh3,200.00 			
- Adopts high-quality wafer level chip
 - Supports SATA III protocol with transmission speed up to 550 MB/s
 - View information through S.M.A.R.T
 - Provides better read and write performance with TRIM and NCQ
 - Low power consumption management
 
 
KSh13,000.00 			
- Adopts high-quality wafer level chip
 - Supports SATAⅢ protocol with transmission speed up to 550 MB/s
 - View information through S.M.A.R.T
 - Provides better read and write performance with TRIM and NCQ
 - Low power consumption management
 - Large TBW
 
 
KSh5,000.00 			
- 1 year warranty
 - 1,500,000 hours MTBF
 - Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
 - Supports PCIe3.0x4 and NVMe 1.3 protocol.
 - Supports LDPC ECC to enhance data reliability.
 - View information through S.M.A.R.T.
 - Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
 - Supports TRIM to improve read/write performance and speed.
 - Low power consumption management.
 
 
KSh3,100.00 			
- PCIe Gen3.0 × 4.
 - Compatible with NVMe 1.3 protocol; high performance and low latency
 - View information through S.M.A.R.T.
 - Provides better read and write performance with TRIM.
 - Adopts LDPC ECC algorithm to enhance data reliability.
 - Low power consumption management.
 
 
KSh15,000.00 			
- Model: DHI‑SSD‑C900VND512G
 - Capacity: 512 GB
 - Form Factor: M.2 2242 (≈22 × 42 mm)
 - Interface: PCIe Gen 3.0×4 (NVMe 1.3/1.4)
 - NAND Flash: 3D NAND with LDPC ECC
 - Sequential Read Speed: Up to 3,400 MB/s
 - Sequential Write Speed: Up to 3,000 MB/s
 - 4K Random Read IOPS: Estimated up to ~400,000
 - 4K Random Write IOPS: Estimated up to ~500,000
 - Power Consumption: Active and idle optimized for compact devices
 - Features: S.M.A.R.T., TRIM, Garbage Collection, LDPC ECC
 - Shock Resistance & Vibration: Designed to meet industrial standards
 - Operating Temperature: 0 °C to +70 °C
 - Storage Temperature: –40 °C to +85 °C
 - Warranty: Typically 1-year limited (region-dependent)
 
 
KSh7,500.00 			
- 1 year warranty
 - 1,500,000 hours MTBF
 - Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
 - Supports PCIe3.0x4 and NVMe 1.3 protocol.
 - Supports LDPC ECC to enhance data reliability.
 - View information through S.M.A.R.T.
 - Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
 - Supports TRIM to improve read/write performance and speed.
 - Low power consumption management.
 
 
KSh5,500.00 			
- Capacity: 256 GB
 - Form Factor: M.2 2280
 - Port: PCIe Gen 3.0 x 4
 - Net Weight: Max. 8 g (0.02 lb)
 - Product Dimensions: 80.00 mm × 23.00 mm × 4.80 mm (3.15" × 0.91" × 0.19")
 - Packaging Dimensions: 130 mm × 104 mm × 17 mm (5.12" × 4.09" × 0.67")
 - Memory Component: 3D NAND Flash
 - Power Consumption: Max: 2.8 W; Idle: 0.17 W
 - S.M.A.R.T Support: Yes
 - TRIM Support: Yes
 - Garbage Collection: Yes
 - Sequential Read Speed: Up to 3,300 MB/s
 - Sequential Write Speed: Up to 1,200 MB/s
 - 4K Random Read: Up to 124,400 IOPS
 - 4K Random Write: Up to 177,900 IOPS
 - MTBF (Mean Time Between Failures): 1,500,000 hours
 - Operating Temperature: 0 °C to +70 °C (+32 °F to +158 °F)
 - Storage Temperature: -40 °C to +85 °C (-40 °F to +185 °F)
 - Operating Humidity: 5%–95% (non-condensing)
 - Vibration Resistance: 10–200 Hz, 0.5G
 - Shock Resistance: 1,500 G/0.5 ms (half sine wave)
 - Total Bytes Written (TBW): 128 TB
 - Warranty: 1-year limited warranty
 
 
KSh5,000.00 			
- Capacity: 512 GB
 - Form Factor: M.2 2280
 - Port: PCIe Gen 3.0 x 4
 - Net Weight: Max. 8 g (0.02 lb)
 - Product Dimensions: 80.00 mm × 23.00 mm × 4.80 mm (3.15" × 0.91" × 0.19")
 - Packaging Dimensions: 130 mm × 104 mm × 17 mm (5.12" × 4.09" × 0.67")
 - Memory Component: 3D NAND Flash
 - Power Consumption: Max: 2.8 W; Idle: 0.17 W
 - S.M.A.R.T Support: Yes
 - TRIM Support: Yes
 - Garbage Collection: Yes
 - Sequential Read Speed: Up to 3,300 MB/s
 - Sequential Write Speed: Up to 1,200 MB/s
 - 4K Random Read: Up to 124,400 IOPS
 - 4K Random Write: Up to 177,900 IOPS
 - MTBF (Mean Time Between Failures): 1,500,000 hours
 - Operating Temperature: 0 °C to +70 °C (+32 °F to +158 °F)
 - Storage Temperature: -40 °C to +85 °C (-40 °F to +185 °F)
 - Operating Humidity: 5%–95% (non-condensing)
 - Vibration Resistance: 10–200 Hz, 0.5G
 - Shock Resistance: 1,500 G/0.5 ms (half sine wave)
 - Total Bytes Written (TBW): 128 TB
 - Warranty: 1-year limited warranty
 
 
KSh8,000.00 			
- Adopts high-quality wafer level chip
 - Supports SATA III protocol with transmission speed up to 550 MB/s
 - View information through S.M.A.R.T
 - Provides better read and write performance with TRIM and NCQ
 - Low power consumption management
 
 
KSh8,000.00 			
- Adopts high-quality wafer level chip
 - Supports SATA III protocol with transmission speed up to 550 MB/s
 - View information through S.M.A.R.T
 - Provides better read and write performance with TRIM and NCQ
 - Low power consumption management
 
 
KSh3,500.00 			