-
New
- 1 year warranty
- 1,500,000 hours MTBF
- Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
- Supports PCIe3.0x4 and NVMe 1.3 protocol.
- Supports LDPC ECC to enhance data reliability.
- View information through S.M.A.R.T.
- Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
- Supports TRIM to improve read/write performance and speed.
- Low power consumption management.
-
New
- Model: DHI‑SSD‑C900VND1TB
- Capacity: 1 TB
- Form Factor: M.2 2242 (approx. 22 × 42 mm)
- Interface: PCIe Gen 3.0 ×4
- Protocol: NVMe 1.3
- NAND Flash: 3D NAND
- Sequential Read Speed: Up to 3,400 MB/s
- Sequential Write Speed: Up to 3,000 MB/s
- MTBF (Mean Time Between Failures): ~1,500,000 hours
- TBW (Total Bytes Written): ~1,000 GB? (Exact TBW unspecified)
- Features: LDPC ECC, SMART, TRIM, Garbage Collection, End-to-End Data Protection
- Operating Temperature: 0 °C to +70 °C
- Storage Temperature: –40 °C to +85 °C
- Warranty: Typically 1-year limited warranty (region-dependent)
-
New
- 1 year warranty
- 1,500,000 hours MTBF
- Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
- Supports PCIe3.0x4 and NVMe 1.3 protocol.
- Supports LDPC ECC to enhance data reliability.
- View information through S.M.A.R.T.
- Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
- Supports TRIM to improve read/write performance and speed.
- Low power consumption management.
-
New
- Model: DHI‑SSD‑C900VND512G
- Capacity: 512 GB
- Form Factor: M.2 2242 (≈22 × 42 mm)
- Interface: PCIe Gen 3.0×4 (NVMe 1.3/1.4)
- NAND Flash: 3D NAND with LDPC ECC
- Sequential Read Speed: Up to 3,400 MB/s
- Sequential Write Speed: Up to 3,000 MB/s
- 4K Random Read IOPS: Estimated up to ~400,000
- 4K Random Write IOPS: Estimated up to ~500,000
- Power Consumption: Active and idle optimized for compact devices
- Features: S.M.A.R.T., TRIM, Garbage Collection, LDPC ECC
- Shock Resistance & Vibration: Designed to meet industrial standards
- Operating Temperature: 0 °C to +70 °C
- Storage Temperature: –40 °C to +85 °C
- Warranty: Typically 1-year limited (region-dependent)
-
New
- 1 year warranty
- 1,500,000 hours MTBF
- Up to 2000 MB/s sequential read and Up to 1600 MB/s sequential writes
- Supports PCIe3.0x4 and NVMe 1.3 protocol.
- Supports LDPC ECC to enhance data reliability.
- View information through S.M.A.R.T.
- Adopts high-quality 3D NAND wafer level chip and with 4K LDPC technology, the program-erase cycle is effectively improved to extend service time.
- Supports TRIM to improve read/write performance and speed.
- Low power consumption management.
-
New
- Adopts high-quality wafer level chip
- Supports SATA III protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
-
New
- Adopts high-quality wafer level chip
- Supports SATA III protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
-
New
- Adopts high-quality wafer level chip
- Supports SATA III protocol with transmission speed up to 550 MB/s
- View information through S.M.A.R.T
- Provides better read and write performance with TRIM and NCQ
- Low power consumption management
KSh2,300.00
KSh12,500.00
KSh8,000.00
